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Part Datasheet Search > MOSFETs > Infineon > IRF630NSTRLPBF Datasheet PDF
IRF630NSTRLPBF
$ 0.291
IRF630NSTRLPBF Datasheet PDF (11 Pages)
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IRF630NSTRLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
82 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.3 Ω
Polarity
N-Channel
Power Dissipation
82 W
Threshold Voltage
4 V
Input Capacitance
575 pF
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
9.3A
Rise Time
14 ns
Input Capacitance (Ciss)
575pF @25V(Vds)
Input Power (Max)
82 W
Fall Time
15 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
82W (Tc)

IRF630NSTRLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
10.67 mm
Size-Width
11.3 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF630NSTRLPBF Documents

Infineon
11 Pages / 0.32 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

IRF630 Documents

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Intersil
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International Rectifier
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Harris
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ON Semiconductor
IRF630
Vishay Siliconix
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
NXP
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3
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