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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRF630PBF Datasheet PDF
IRF630PBF
$ 0.592
IRF630PBF Datasheet PDF (9 Pages)
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IRF630PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
74W (Tc)
Drain to Source Voltage (Vds)
200 V
Input Capacitance (Ciss)
800pF @25V(Vds)
Input Power (Max)
74 W
Power Dissipation (Max)
74W (Tc)

IRF630PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF630PBF Documents

Vishay Siliconix
9 Pages / 0.15 MByte
Vishay Siliconix
9 Pages / 0.27 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRF630 Documents

ST Microelectronics
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET
VISHAY
Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH 200V 9A 3Pin TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB
Intersil
9A, 200V, 0.4Ω, N-Channel Power MOSFETs
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Harris
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ON Semiconductor
IRF630
Vishay Siliconix
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
NXP
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3
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