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IRF6665TR1
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IRF6665TR1 Datasheet PDF (10 Pages)
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IRF6665TR1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
Direct-FET
Drain to Source Resistance (on) (Rds)
53.0 mΩ
Polarity
N-Channel
Power Dissipation
2.2W (Ta), 42W (Tc)
Part Family
IRF6665
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
3.40 A
Rise Time
2.8 ns
Input Capacitance (Ciss)
530pF @25V(Vds)
Fall Time
4.3 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)

IRF6665TR1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6665TR1 Documents

Infineon
10 Pages / 0.59 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
10 Pages / 0.59 MByte

IRF6665 Documents

Infineon
Direct-FET N-CH 100V 4.2A
International Rectifier
Trans MOSFET N-CH Si 100V 4.2A 6Pin Direct-FET SH
Infineon
Direct-FET N-CH 100V 4.2A
International Rectifier
Trans MOSFET N-CH 100V 4.2A 6Pin Direct-FET SH T/R
International Rectifier
Trans MOSFET N-CH Si 100V 4.2A 6Pin Direct-FET SH T/R
Infineon
Direct-FET N-CH 100V 4.2A
Infineon
Direct-FET N-CH 100V 4.2A
International Rectifier
Trans MOSFET N-CH Si 100V 4.2A 6Pin Direct-FET SH T/R
Infineon
Direct-FET N-CH 100V 4.2A
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