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IRF6665TR1
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IRF6665TR1 Datasheet PDF (10 Pages)
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IRF6665TR1 Specifications

TYPE
DESCRIPTION
Number of Pins
6 Pin
Case/Package
DirectFET™ Isometric SH
Drain to Source Resistance (on) (Rds)
53.0 mΩ
Polarity
N-Channel
Power Dissipation
42.0 W
Part Family
IRF6665
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
3.40 A

IRF6665TR1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete

IRF6665TR1 Documents

International Rectifier
10 Pages / 0.61 MByte
International Rectifier
10 Pages / 0.59 MByte

IRF6665 Documents

Infineon
Direct-FET N-CH 100V 4.2A
International Rectifier
Trans MOSFET N-CH Si 100V 4.2A 6Pin Direct-FET SH
Infineon
Direct-FET N-CH 100V 4.2A
International Rectifier
Trans MOSFET N-CH 100V 4.2A 6Pin Direct-FET SH T/R
International Rectifier
Trans MOSFET N-CH Si 100V 4.2A 6Pin Direct-FET SH T/R
Infineon
Direct-FET N-CH 100V 4.2A
Infineon
Direct-FET N-CH 100V 4.2A
International Rectifier
Trans MOSFET N-CH Si 100V 4.2A 6Pin Direct-FET SH T/R
Infineon
Direct-FET N-CH 100V 4.2A
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