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Part Datasheet Search > MOSFETs > Infineon > IRF6674TRPBF Datasheet PDF
IRF6674TRPBF
$ 1.24
IRF6674TRPBF Datasheet PDF (9 Pages)
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IRF6674TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
Direct-FET
Power Rating
89 W
Number of Channels
1 Channel
Number of Positions
7 Position
Drain to Source Resistance (on) (Rds)
0.009 Ω
Polarity
N-Channel
Power Dissipation
89 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Continuous Drain Current (Ids)
13.4A
Rise Time
12 ns
Input Capacitance (Ciss)
1350pF @25V(Vds)
Fall Time
8.7 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
40 ℃
Power Dissipation (Max)
3.6W (Ta), 89W (Tc)

IRF6674TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.35 mm
Size-Width
5.05 mm
Size-Height
0.7 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6674TRPBF Documents

Infineon
9 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

IRF6674 Documents

Infineon
A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 67 amperes optimized with low on resistance.
Infineon
Direct-FET N-CH 60V 13.4A
International Rectifier
MOSFET 60V 1 N-CH HEXFET 11mOhms 24NC
Infineon
Direct-FET N-CH 60V 13.4A
International Rectifier
N-Ch 60V 67A 89W 0, 011R MZ
International Rectifier
Hexfet Power Mosfet
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