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Part Datasheet Search > MOSFETs > Infineon > IRF6717MTRPBF Datasheet PDF
IRF6717MTRPBF
$ 1.374
IRF6717MTRPBF Datasheet PDF (28 Pages)
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IRF6717MTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
DirectFET-MX
Power Rating
96 W
Number of Positions
5 Position
Polarity
N-Channel
Power Dissipation
96 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
25 V
Continuous Drain Current (Ids)
38A
Rise Time
37 ns
Input Capacitance (Ciss)
6750pF @13V(Vds)
Input Power (Max)
2.8 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.8W (Ta), 96W (Tc)

IRF6717MTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.35 mm
Size-Width
5.05 mm
Size-Height
0.7 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6717MTRPBF Documents

Infineon
28 Pages / 1.49 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRF6717 Documents

Infineon
Direct-FET N-CH 25V 38A
International Rectifier
Trans MOSFET N-CH 25V 38A 7Pin Direct-FET MX T/R
Infineon
Direct-FET N-CH 25V 38A
International Rectifier
Trans MOSFET N-CH 25V 38A 7Pin Direct-FET MX T/R
Infineon
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance.
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