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Part Datasheet Search > MOSFETs > Infineon > IRF6718L2TR1PBF Datasheet PDF
IRF6718L2TR1PBF
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IRF6718L2TR1PBF Datasheet PDF (3 Pages)
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IRF6718L2TR1PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
13 Pin
Case/Package
Direct-FET
Number of Positions
13 Position
Drain to Source Resistance (on) (Rds)
0.0005 Ω
Polarity
N-CH
Power Dissipation
4.3 W
Threshold Voltage
1.9 V
Drain to Source Voltage (Vds)
25 V
Continuous Drain Current (Ids)
61A
Rise Time
140 ns
Input Capacitance (Ciss)
6500pF @13V(Vds)
Fall Time
53 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
4.3W (Ta), 83W (Tc)

IRF6718L2TR1PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF6718L2TR1PBF Documents

Infineon
3 Pages / 0.36 MByte
Infineon
10 Pages / 0.22 MByte
Infineon
6 Pages / 1.89 MByte

IRF6718L2TR1 Documents

International Rectifier
Trans MOSFET N-CH 25V 61A 13Pin Direct-FET L6 T/R
Infineon
Direct-FET N-CH 25V 61A
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