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Part Datasheet Search > MOSFETs > Infineon > IRF6811STRPBF Datasheet PDF
IRF6811STRPBF
$ 0.219
IRF6811STRPBF Datasheet PDF (20 Pages)
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IRF6811STRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
Direct-FET
Power Rating
32 W
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.0028 Ω
Polarity
N-Channel
Power Dissipation
2.1 W
Threshold Voltage
1.6 V
Drain to Source Voltage (Vds)
25 V
Continuous Drain Current (Ids)
19A
Rise Time
19 ns
Input Capacitance (Ciss)
1590pF @13V(Vds)
Input Power (Max)
2.1 W
Fall Time
5.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.1W (Ta), 32W (Tc)

IRF6811STRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
4.85 mm
Size-Width
3.95 mm
Size-Height
0.7 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6811STRPBF Documents

Infineon
20 Pages / 0.44 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.19 MByte

IRF6811 Documents

Infineon
Direct-FET N-CH 25V 19A
International Rectifier
Trans MOSFET N-CH 25V 19A 6Pin Direct-FET SQ T/R
International Rectifier
MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11NC
Infineon
Direct-FET N-CH 25V 19A
Infineon
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance.
International Rectifier
Directfet power Mosfet
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