IRF7303QPBF Datasheet PDF - International Rectifier

●Description

●These HEXFET® Power MOSFET"s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET"s are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

● Advanced Process Technology

● Ultra Low On-Resistance

● Dual N Channel MOSFET

● Surface Mount

● Available in Tape & Reel

● 150°C Operating Temperature

● Lead-Free