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IRF7303QPBF
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IRF7303QPBF Datasheet PDF (9 Pages)
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IRF7303QPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC
Polarity
N-CH
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
4.9A
Rise Time
21 ns
Input Capacitance (Ciss)
520pF @25V(Vds)
Fall Time
7.7 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2000 mW

IRF7303QPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Material
Silicon

IRF7303QPBF Documents

Infineon
9 Pages / 0.23 MByte

IRF7303 Documents

International Rectifier
MOSFET 2N-CH 30V 4.9A 8-SOIC
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SOIC N-CH 30V 4.9A
IRF
Power MOSFET(Vdss=30V, Rds(on)=0.05Ω)
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SOIC N-CH 30V 4.9A
Infineon
SOIC N-CH 30V 4.9A
International Rectifier
Dual N-Channel 30V 0.08Ω 25NC 2W Generation V SMT Mosfet - SOIC-8
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Trans MOSFET N-CH Si 30V 4.9A 8Pin SOIC Tube
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Dual N-Channel 30V 2W 25NC Hexfet Power Mosfet Surface Mount - SOIC-8
International Rectifier
30V Dual N-channel Hexfet Power Mosfet In A So-8 Package
Infineon
SOIC N-CH 30V 4.9A
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