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Part Datasheet Search > MOSFETs > International Rectifier > IRF7309PBF Datasheet PDF
IRF7309PBF
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IRF7309PBF Datasheet PDF (11 Pages)
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IRF7309PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Current Rating
4.00 A
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
50 mΩ
Polarity
N-Channel, P-Channel
Power Dissipation
1.4 W
Part Family
IRF7309
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30.0 V
Continuous Drain Current (Ids)
4.70 A
Thermal Resistance
62.5 K/W
Input Capacitance (Ciss)
520pF @15V(Vds)
Input Power (Max)
1.4 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature (Max)
150 ℃

IRF7309PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Operating Temperature
-55℃ ~ 150℃

IRF7309PBF Documents

International Rectifier
11 Pages / 2.01 MByte
International Rectifier
11 Pages / 2.04 MByte

IRF7309 Documents

International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N+P 30V 4A/3A
IRF
HEXFET Power MOSFET
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SOIC N+P 30V 4A/3A
Infineon
SOIC N+P 30V 4A/3A
International Rectifier
Trans MOSFET N/P-CH 30V 4A/3A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N/P-CH 30V 4A/3A 8Pin SOIC Tube
International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N+P 30V 4A/3A
Infineon
SOIC N+P 30V 4A/3A
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