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IRF7309 Datasheet PDF

Part Series:
IRF7309 Series
Category:
-
Description:
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Updated Time: 2023/01/13 02:17:19 (UTC + 8)

IRF7309 Datasheet PDF -

11 Pages
International Rectifier
Trans MOSFET N/P-CH 30V 4A/3A 8Pin SOIC T/R
11 Pages
International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
11 Pages
International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
11 Pages
International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
11 Pages
Infineon
SOIC N+P 30V 4A/3A
11 Pages
Infineon
SOIC N+P 30V 4A/3A
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SOIC N+P 30V 4A/3A

IRF7309 - International Rectifier Function Overview

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.
  Generation V Technology
  Ultra Low On-Resistance
  Dual N and P Channel Mosfet
  Surface Mount
  Available in Tape & Reel
  Dynamic dv/dt Rating
  Fast Switching
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