IRF7309QPBF Datasheet PDF - International Rectifier

●Description

●Specifically designed for Automotive applications, these HEXFET® Power MOSFET"s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET"s are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

●  Advanced Process Technology

●  Ultra Low On-Resistance

●  Dual N and P Channel MOSFET

●  Surface Mount

●  Available in Tape & Reel

●  150°C Operating Temperature

●  Automotive [Q101] Qualified

●  Lead-Free