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IRF7313QPBF Datasheet PDF - Infineon

Manufacturer:

Infineon

Case Package:

SOIC-8

Description:

SOIC N-CH 30V 6.5A

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Documentation:

IRF7313QPBF Datasheet (7 Pages)

Package Outline Dimension on6 Page

IRF7313QPBF Datasheet PDF (7 Pages)

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IRF7313QPBF Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Power Rating

2 W

Number of Channels

2 Channel

Drain to Source Resistance (on) (Rds)

46 mΩ

Polarity

N-CH

Power Dissipation

2 W

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30 V

Continuous Drain Current (Ids)

6.5A

Rise Time

8.9 ns

Input Capacitance (Ciss)

650pF @25V(Vds)

Fall Time

17 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2000 mW

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IRF7313QPBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Material

Silicon

Size-Length

4.9 mm

Size-Width

3.9 mm

Size-Height

1.75 mm

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IRF7313QPBF Environmental

IRF7313QPBF Documents

IRF7313QPBF Datasheet

Infineon

7 Pages / 0.23 MByte

IRF7313 Documents

IRF7313 Datasheet PDF

International Rectifier

N-Channel Dual MOSFET, Vdss = 30V, Rds = 0.029Ω, Id = 6.5A, SOIC-8

IRF7313 Datasheet PDF

Infineon

SOIC N-CH 30V 6.5A

IRF7313 Datasheet PDF

IRF

HEXFET POWER MOSFET

IRF7313TRPBF Datasheet PDF

Infineon

SOIC N-CH 30V 6.5A

IRF7313PBF Datasheet PDF

Infineon

SOIC N-CH 30V 6.5A

IRF7313TRPBF Datasheet PDF

International Rectifier

MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.029Ω; ID 6.5A; SO-8; PD 2W; VGS +/-20V

IRF7313PBF Datasheet PDF

International Rectifier

Trans MOSFET N-CH 30V 6.5A 8Pin SOIC Tube

IRF7313QPBF Datasheet PDF

Infineon

SOIC N-CH 30V 6.5A

IRF7313TR Datasheet PDF

International Rectifier

30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

IRF7313QTRPBF Datasheet PDF

Infineon

SOIC N-CH 30V 6.5A

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