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Part Datasheet Search > MOSFETs > International Rectifier > IRF7313QTRPBF Datasheet PDF
IRF7313QTRPBF
Part 3D Model
$ 0.45
IRF7313QTRPBF Datasheet PDF (7 Pages)
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IRF7313QTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO-8
Drain to Source Resistance (on) (Rds)
0.046 Ω
Polarity
Dual N-Channel
Power Dissipation
2 W
Part Family
IRF7313Q
Input Capacitance
650pF @25V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
6.50 A
Input Capacitance (Ciss)
650pF @25V(Vds)
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRF7313QTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Cut Tape (CT)
Size-Length
5 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃

IRF7313QTRPBF Documents

International Rectifier
7 Pages / 0.21 MByte

IRF7313 Documents

International Rectifier
N-Channel Dual MOSFET, Vdss = 30V, Rds = 0.029Ω, Id = 6.5A, SOIC-8
Infineon
SOIC N-CH 30V 6.5A
IRF
HEXFET POWER MOSFET
Infineon
SOIC N-CH 30V 6.5A
Infineon
SOIC N-CH 30V 6.5A
International Rectifier
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.029Ω; ID 6.5A; SO-8; PD 2W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 30V 6.5A 8Pin SOIC Tube
Infineon
SOIC N-CH 30V 6.5A
International Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 30V 6.5A
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