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Part Datasheet Search > MOSFETs > Infineon > IRF7406GTRPBF Datasheet PDF
IRF7406GTRPBF
Part 3D Model
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IRF7406GTRPBF Datasheet PDF (9 Pages)
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IRF7406GTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Polarity
P-Channel
Power Dissipation
2.5 W
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
6.7A
Rise Time
33 ns
Input Capacitance (Ciss)
1100pF @25V(Vds)
Fall Time
47 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF7406GTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7406GTRPBF Documents

Infineon
9 Pages / 0.25 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
5 Pages / 0.08 MByte

IRF7406 Documents

International Rectifier
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC P-CH 30V 5.8A
IRF
HEXFET POWER MOSFET
Infineon
SOIC P-CH 30V 5.8A
Infineon
SOIC P-CH 30V 5.8A
International Rectifier
Trans MOSFET P-CH 30V 5.8A 8Pin SOIC T/R
International Rectifier
Trans MOSFET P-CH 30V 5.8A 8Pin SOIC Tube
International Rectifier
Trans MOSFET P-CH 30V 6.7A 8Pin SOIC T/R
Infineon
SOIC P-CH 30V 6.7A
Infineon
SOIC P-CH 30V 5.8A
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