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Part Datasheet Search > MOSFETs > Infineon > IRF7424GTRPBF Datasheet PDF
IRF7424GTRPBF
Part 3D Model
$ 0.635
IRF7424GTRPBF Datasheet PDF (9 Pages)
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IRF7424GTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Polarity
P-CH
Power Dissipation
2.5 W
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
11A
Rise Time
23 ns
Input Capacitance (Ciss)
4030pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
76 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF7424GTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7424GTRPBF Documents

Infineon
9 Pages / 0.19 MByte

IRF7424 Documents

International Rectifier
-30V Single P-channel Hexfet Power Mosfet In A So-8 Package
Infineon
SOIC P-CH 30V 11A
IRF
Ultra Low On-Resistance
Infineon
SOIC P-CH 30V 11A
International Rectifier
Single P-Channel 30V 22mOhm 110NC 2.5W Silicon SMT Mosfet - SOIC-8
Infineon
SOIC P-CH 30V 11A
International Rectifier
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 13.5 Milliohms; ID -11A; SO-8; PD 2.5W; gFS 17S
Infineon
SOIC P-CH 30V 11A
Infineon
INFINEON IRF7424.PBF MOSFET Transistor, P Channel, 11A, -30V, 13.5mohm, -10V, -2.5V
International Rectifier
MOSFET P-CH 30V 11A 8-SOIC
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