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Part Datasheet Search > MOSFETs > Infineon > IRF7530PBF Datasheet PDF
IRF7530PBF
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IRF7530PBF Datasheet PDF (8 Pages)
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IRF7530PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
Micro-8
Power Rating
1.3 W
Polarity
N-CH
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
5.4A
Rise Time
11 ns
Input Capacitance (Ciss)
1310pF @15V(Vds)
Input Power (Max)
1.3 W
Fall Time
16 ns
Power Dissipation (Max)
1.3 W

IRF7530PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Operating Temperature
-55℃ ~ 150℃

IRF7530PBF Documents

Infineon
8 Pages / 0.14 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
12 Pages / 0.47 MByte
Infineon
37 Pages / 2.01 MByte

IRF7530 Documents

International Rectifier
Dual N-Channel MOSFET, Vdss = 20V, Rds = 0.03Ω, Id = 5.4A, SOIC 8핀
Infineon
Micro N-CH 20V 5.4A
IRF
Power MOSFET(Vdss=20V, Rds(on)=0.03Ω)
Infineon
Micro N-CH 20V 5.4A
International Rectifier
Trans MOSFET N-CH 20V 5.4A 8Pin Micro T/R
Infineon
Micro N-CH 20V 5.4A
Infineon
Micro N-CH 20V 5.4A
International Rectifier
Trans MOSFET N-CH 20V 5.4A 8Pin Micro
International Rectifier
MOSFET 2N-CH 20V 5.4A MICRO8
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