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Part Datasheet Search > MOSFETs > Infineon > IRF7811A Datasheet PDF
IRF7811A
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IRF7811A Datasheet PDF (4 Pages)
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IRF7811A Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
28.0 V
Current Rating
11.4 A
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
8.70 Ω
Polarity
N-CH
Power Dissipation
2.5W (Ta)
Part Family
IRF7811A
Drain to Source Voltage (Vds)
28 V
Breakdown Voltage (Drain to Source)
28.0 V (max)
Continuous Drain Current (Ids)
11.4 A
Rise Time
4.10 ns
Input Capacitance (Ciss)
1760pF @15V(Vds)
Power Dissipation (Max)
2.5W (Ta)

IRF7811A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7811A Documents

Infineon
4 Pages / 0.12 MByte
Infineon
10 Pages / 0.25 MByte

IRF7811 Documents

International Rectifier
Infineon
MOSFET N-CH 28V 14A 8-SOIC
Infineon
SOIC N-CH 30V 10.8A
Infineon
SOIC N-CH 30V 10.8A
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 11 Milliohms; ID 10.8A; SO-8; PD 2.5W; VGS +/-20
International Rectifier
Trans MOSFET N-CH 30V 14A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 14A 8Pin SOIC
International Rectifier
Trans MOSFET N-CH 30V 14A 8Pin SOIC
International Rectifier
Trans MOSFET N-CH 30V 10.8A 8Pin SOIC Tube
International Rectifier
MOSFET N-CH 28V 11.4A 8-SOIC
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