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Part Datasheet Search > MOSFETs > Infineon > IRF7811WGTRPBF Datasheet PDF
IRF7811WGTRPBF
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IRF7811WGTRPBF Datasheet PDF (6 Pages)
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IRF7811WGTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Polarity
N-CH
Power Dissipation
3.1W (Ta)
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
14A
Rise Time
11 ns
Input Capacitance (Ciss)
2335pF @16V(Vds)
Fall Time
9.9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.1W (Ta)

IRF7811WGTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7811WGTRPBF Documents

Infineon
6 Pages / 0.18 MByte
Infineon
3 Pages / 0.36 MByte

IRF7811 Documents

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Infineon
MOSFET N-CH 28V 14A 8-SOIC
Infineon
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Infineon
SOIC N-CH 30V 10.8A
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 11 Milliohms; ID 10.8A; SO-8; PD 2.5W; VGS +/-20
International Rectifier
Trans MOSFET N-CH 30V 14A 8Pin SOIC T/R
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Trans MOSFET N-CH 30V 14A 8Pin SOIC
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Trans MOSFET N-CH 30V 14A 8Pin SOIC
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Trans MOSFET N-CH 30V 10.8A 8Pin SOIC Tube
International Rectifier
MOSFET N-CH 28V 11.4A 8-SOIC
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