IRF820B Datasheet PDF - Fairchild

●General Description

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

●Features

●• 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V

●• Low gate charge ( typical 14 nC)

●• Low Crss ( typical 10 pF)

●• Fast switching

●• 100% avalanche tested

●• Improved dv/dt capability