IRF8788PBF Datasheet PDF - Infineon

●The IRF8788PBF is a HEXFET® single N-channel Power MOSFET optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The latest HEXFET® power MOSFET silicon technology into the industry standard package. The reduced total losses make this product ideal for high efficiency DC-to-DC converters that power the latest generation of processors for Notebook and Netcom applications.

● Very low gate charge

● Low gate impedance

● Fully characterized avalanche voltage and current

● Low static drain-to-source ON-resistance at 4.5V gate-to-source voltage

● 20V VGS Maximum gate rating