Web Analytics
Part Datasheet Search > IGBTs > ST Microelectronics > STGB30M65DF2 Datasheet PDF
STGB30M65DF2
$ 1.321
STGB30M65DF2 Datasheet PDF (19 Pages)
View Datasheet
Click page to view the detail

STGB30M65DF2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Power Dissipation
258 W
Breakdown Voltage (Collector to Emitter)
650 V
Reverse recovery time
140 ns
Input Power (Max)
258 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
258 W

STGB30M65DF2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STGB30M65DF2 Documents

ST Microelectronics
19 Pages / 0.51 MByte
ST Microelectronics
19 Pages / 0.67 MByte

STGB30M65 Documents

ST Microelectronics
STMICROELECTRONICS STGB30M65DF2 IGBT Single Transistor, 60A, 1.55V, 258W, 650V, TO-263, 3Pins
Part Datasheet PDF Search
Loading...
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.

Relate Parts

Popular Parts

BOM Matching Tool
Matching parts
Alternative parts
Warning risks
Computing costs
Upload BOM File
File format: *.xlsx, *.xls, *.csv
Online 3D Gerber Viewer
Modeling in 15s
Preview PCB
40 types of layers
Preflight Risk
Upload Gerber File
Support standard RS-274X file, accept zip rar or 7z