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Part Datasheet Search > IGBTs > ST Microelectronics > STGB30M65DF2 Datasheet PDF
STGB30M65DF2
$ 1.321
STGB30M65DF2 Datasheet PDF (19 Pages)
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STGB30M65DF2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Power Dissipation
258 W
Breakdown Voltage (Collector to Emitter)
650 V
Reverse recovery time
140 ns
Input Power (Max)
258 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
258 W

STGB30M65DF2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STGB30M65DF2 Documents

ST Microelectronics
19 Pages / 0.51 MByte
ST Microelectronics
19 Pages / 0.67 MByte

STGB30M65 Documents

ST Microelectronics
STMICROELECTRONICS STGB30M65DF2 IGBT Single Transistor, 60A, 1.55V, 258W, 650V, TO-263, 3Pins
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