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Part Datasheet Search > MOSFETs > Infineon > IRF9335PBF Datasheet PDF
IRF9335PBF
Part 3D Model
$ 0.092
IRF9335PBF Datasheet PDF (8 Pages)
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IRF9335PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.048 Ω
Polarity
P-Channel
Power Dissipation
2.5 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
5.4A
Rise Time
19 ns
Input Capacitance (Ciss)
386pF @25V(Vds)
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

IRF9335PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
4.98 mm
Size-Width
3.99 mm
Size-Height
1.57 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF9335PBF Documents

Infineon
8 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
12 Pages / 0.47 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
12 Pages / 0.56 MByte

IRF9335 Documents

Infineon
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC P-CH 30V 5.4A
Infineon
SOIC P-CH 30V 5.4A
International Rectifier
Trans MOSFET P-CH 30V 5.4A 8Pin SOIC N Tube
International Rectifier
Trans MOSFET P-CH 30V 5.4A 8Pin SOIC N T/R
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