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Part Datasheet Search > MOSFETs > ST Microelectronics > STB11NK50ZT4 Datasheet PDF
STB11NK50ZT4
$ 0.737
STB11NK50ZT4 Datasheet PDF (16 Pages)
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STB11NK50ZT4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
10.0 A
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.48 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
3.75 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
4.50 A
Rise Time
18 ns
Input Capacitance (Ciss)
1390pF @25V(Vds)
Input Power (Max)
125 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125W (Tc)

STB11NK50ZT4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

STB11NK50ZT4 Documents

ST Microelectronics
16 Pages / 0.39 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STB11NK50 Documents

ST Microelectronics
D2PAK N-CH 500V 10A
ST Microelectronics
N-channel 500V, 0.48 , 10A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET
ST Microelectronics
N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
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