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IRF9510PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2Ω; ID -4A; TO-220AB; PD 43W; VGS +/-20V

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Documentation:

IRF9510PBF Datasheet (10 Pages)

IRF9510PBF Datasheet PDF (10 Pages)

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IRF9510PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

-100 V

Current Rating

-4.00 A

Case/Package

TO-220-3

Power Rating

43 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

1.2 Ω

Polarity

P-Channel

Power Dissipation

20 W

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

-100 V

Continuous Drain Current (Ids)

-4.00 A

Rise Time

27.0 ns

Input Capacitance (Ciss)

200pF @25V(Vds)

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

43 W

View Datasheet >

IRF9510PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

10.41 mm

Size-Width

4.7 mm

Size-Height

15.49 mm

Operating Temperature

-55℃ ~ 175℃

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IRF9510PBF Environmental

IRF9510PBF Function Overview

IRF9510PBF Documents

IRF9510PBF Datasheet

Vishay Semiconductor

10 Pages / 0.26 MByte

IRF9510PBF Other Datasheet PDF

Vishay Semiconductor

9 Pages / 0.26 MByte

IRF9510PBF Notice File

Vishay Semiconductor

3 Pages / 0.14 MByte

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