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Part Datasheet Search > MOSFETs > Infineon > IRF9520NPBF Datasheet PDF
IRF9520NPBF
$ 0.293
IRF9520NPBF Datasheet PDF (9 Pages)
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IRF9520NPBF Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
48 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.48 Ω
Polarity
P-CH
Power Dissipation
48 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
6.8A
Rise Time
47 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Fall Time
31 ns
Operating Temperature (Max)
175 ℃

IRF9520NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

IRF9520NPBF Documents

Infineon
9 Pages / 0.15 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
10 Pages / 0.27 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
10 Pages / 0.15 MByte

IRF9520 Documents

International Rectifier
Trans MOSFET P-CH Si 100V 6A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET P-CH 100V 6A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 100V 6A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 100...
Vishay Siliconix
MOSFET P-CH 100V 6.8A TO-220AB
VISHAY
Trans MOSFET P-CH 100V 6.8A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 100V 6.8A 3Pin(3+Tab) TO-220AB
Harris
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild
Trans MOSFET P-CH Si 100V 6A 3Pin(3+Tab) TO-220AB
Infineon
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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