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Part Datasheet Search > MOSFETs > Vishay Semiconductor > IRF9630SPBF Datasheet PDF
IRF9630SPBF
$ 0.63
IRF9630SPBF Datasheet PDF (9 Pages)
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IRF9630SPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.8 Ω
Polarity
P-Channel
Power Dissipation
3 W
Drain to Source Voltage (Vds)
-200 V
Continuous Drain Current (Ids)
-6.50 A
Input Capacitance (Ciss)
700pF @25V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3000 mW

IRF9630SPBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
10.67 mm
Size-Width
9.02 mm
Size-Height
4.83 mm

IRF9630SPBF Documents

Vishay Semiconductor
9 Pages / 0.16 MByte
Vishay Semiconductor
9 Pages / 0.16 MByte
Vishay Semiconductor
3 Pages / 0.06 MByte

IRF9630 Documents

International Rectifier
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package.
Vishay Siliconix
MOSFET P-CH 200V 6.5A TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB
VISHAY
Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH...
Samsung
200V, P-channel power MOSFET
Fairchild
Trans MOSFET P-CH Si 200V 6.5A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=-200V, Rds(on)=0.8Ω, Id=-6.5A)
VISHAY
TO-220-3P-CH 200V 6.5A 800mΩ
VISHAY
TO-252-3P-CH 200V 12A 300mΩ
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