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IRF9Z14SPBF
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IRF9Z14SPBF Datasheet PDF (10 Pages)
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IRF9Z14SPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-6.70 A
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
500 mΩ
Polarity
P-Channel
Power Dissipation
3.7 W
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
-60.0 V
Continuous Drain Current (Ids)
-6.70 A
Rise Time
63 ns
Input Capacitance (Ciss)
270pF @25V(Vds)
Input Power (Max)
3.7 W
Fall Time
31 ns

IRF9Z14SPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 175℃ (TJ)
Minimum Packing Quantity
2000

IRF9Z14SPBF Documents

VISHAY
10 Pages / 0.18 MByte
VISHAY
11 Pages / 0.21 MByte

IRF9Z14 Documents

Vishay Siliconix
MOSFET P-CH 60V 6.7A TO-220AB
VISHAY
TO-220AB P-CH 60V 6.7A
International Rectifier
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagel
Vishay Semiconductor
Trans MOSFET P-CH 60V 6.7A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=-60V, Rds(on)=0.5Ω, Id=-6.7A)
VISHAY
TO-220-3P-CH 60V 6.7A 500mΩ
VISHAY
TO-252-3P-CH 60V 6.7A 500mΩ
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.5Ω; ID -6.7A; TO-220AB; PD 43W; VGS +/-20V
VISHAY
TO-252-3P-CH 60V 6.7A 500mΩ
Vishay Siliconix
MOSFET P-CH 60V 6.7A TO-220AB
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