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Part Datasheet Search > MOSFETs > VISHAY > IRF9Z14STRLPBF Datasheet PDF
IRF9Z14STRLPBF
$ 0.428

IRF9Z14STRLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Drain to Source Resistance (on) (Rds)
500 mΩ
Polarity
P-Channel
Power Dissipation
3.7 W
Drain to Source Voltage (Vds)
-60.0 V
Continuous Drain Current (Ids)
-6.70 A
Rise Time
63 ns
Input Capacitance (Ciss)
270pF @25V(Vds)
Fall Time
31 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.7W (Ta), 43W (Tc)

IRF9Z14STRLPBF Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 175℃
Minimum Packing Quantity
2000

IRF9Z14STRLPBF Documents

VISHAY
8 Pages / 0.15 MByte

IRF9Z14 Documents

Vishay Siliconix
MOSFET P-CH 60V 6.7A TO-220AB
VISHAY
TO-220AB P-CH 60V 6.7A
International Rectifier
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagel
Vishay Semiconductor
Trans MOSFET P-CH 60V 6.7A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=-60V, Rds(on)=0.5Ω, Id=-6.7A)
VISHAY
TO-220-3P-CH 60V 6.7A 500mΩ
VISHAY
TO-252-3P-CH 60V 6.7A 500mΩ
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.5Ω; ID -6.7A; TO-220AB; PD 43W; VGS +/-20V
VISHAY
TO-252-3P-CH 60V 6.7A 500mΩ
Vishay Siliconix
MOSFET P-CH 60V 6.7A TO-220AB
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