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Part Datasheet Search > MOSFETs > Vishay Semiconductor > IRF9Z24PBF Datasheet PDF
IRF9Z24PBF
$ 0.491
IRF9Z24PBF Datasheet PDF (8 Pages)
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IRF9Z24PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220
Power Rating
60 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.28 Ω
Polarity
P-Channel
Power Dissipation
60 W
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
-11.0 A
Operating Temperature (Max)
175 ℃

IRF9Z24PBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube

IRF9Z24PBF Documents

Vishay Semiconductor
8 Pages / 1.76 MByte
Vishay Semiconductor
20 Pages / 2.6 MByte

IRF9Z24 Documents

International Rectifier
MOSFET P-CH 60V 11A TO-220AB
VISHAY
MOSFET P-CH 60V 11A TO-220AB
Vishay Siliconix
MOSFET P-CH 60V 11A TO-220AB
Samsung
P-CHANNEL POWER MOSFETs
Vishay Semiconductor
MOSFET P-CH 60V 11A TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Fairchild
Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
IRF
POWER MOSFET
Infineon
TO-220AB P-CH 55V 12A
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