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Part Datasheet Search > MOSFETs > VISHAY > IRF9Z24SPBF Datasheet PDF
IRF9Z24SPBF
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IRF9Z24SPBF Datasheet PDF (8 Pages)
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IRF9Z24SPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.28 Ω
Polarity
P-Channel
Power Dissipation
3.7 W
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
-60.0 V
Continuous Drain Current (Ids)
11.0 A, -11.0 A
Rise Time
68 ns
Input Capacitance (Ciss)
570pF @25V(Vds)
Input Power (Max)
3.7 W
Fall Time
29 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3700 mW

IRF9Z24SPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)
Minimum Packing Quantity
2000

IRF9Z24SPBF Documents

VISHAY
8 Pages / 0.15 MByte
VISHAY
9 Pages / 0.16 MByte
VISHAY
3 Pages / 0.06 MByte

IRF9Z24 Documents

International Rectifier
MOSFET P-CH 60V 11A TO-220AB
VISHAY
MOSFET P-CH 60V 11A TO-220AB
Vishay Siliconix
MOSFET P-CH 60V 11A TO-220AB
Samsung
P-CHANNEL POWER MOSFETs
Vishay Semiconductor
MOSFET P-CH 60V 11A TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Fairchild
Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
IRF
POWER MOSFET
Infineon
TO-220AB P-CH 55V 12A
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