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Part Datasheet Search > MOSFETs > Infineon > IRF9Z34NLPBF Datasheet PDF
IRF9Z34NLPBF
$ 0.418
IRF9Z34NLPBF Datasheet PDF (11 Pages)
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IRF9Z34NLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-262-3
Power Rating
68 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.1 Ω
Polarity
P-CH
Power Dissipation
68 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
19A
Rise Time
55 ns
Input Capacitance (Ciss)
620pF @25V(Vds)
Fall Time
41 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.8W (Ta), 68W (Tc)

IRF9Z34NLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Rail, Tube
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
9.65 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF9Z34NLPBF Documents

Infineon
11 Pages / 1.07 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
6 Pages / 0.25 MByte
Infineon
1 Pages / 0.14 MByte

IRF9Z34 Documents

VISHAY
TO-220AB P-CH 60V 18A
International Rectifier
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
Trans MOSFET P-CH 60V 18A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 60V 18A TO-220AB
Infineon
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Kersemi Electronic
Power MOSFET
Infineon
TO-220AB P-CH 55V 19A
Infineon
D2PAK P-CH 55V 19A
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