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Part Datasheet Search > MOSFETs > International Rectifier > IRFB11N50APBF Datasheet PDF
IRFB11N50APBF
$ 1.026
IRFB11N50APBF Datasheet PDF (9 Pages)
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IRFB11N50APBF Specifications

TYPE
DESCRIPTION
Voltage Rating (DC)
500 V
Current Rating
11.0 A
Case/Package
TO-220-3
Polarity
N-Channel
Power Dissipation
170 W
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
11.0 A

IRFB11N50APBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk

IRFB11N50APBF Documents

International Rectifier
9 Pages / 0.22 MByte

IRFB11N50 Documents

International Rectifier
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52Ω, ID = 11A
IRF
Power MOSFET(Vdss=500V, Rds(on)max=0.52Ω, Id=11A)
VISHAY
TO-220-3 N-CH 500V 11A 520mΩ
International Rectifier
SMPS MOSFET, N채널, Vd = 500V, Rds = 0.52Ω, Id = 11A, TO-220패키지
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.52Ω; ID 11A; TO-220AB; PD 170W; VGS +/-30V
Vishay Siliconix
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET N-CH 500V 11A TO-220AB
VISHAY
TO-220AB N-CH 500V 11A
Vishay Siliconix
MOSFET N-CH 500V 11A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220
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