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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFB11N50APBF Datasheet PDF
IRFB11N50APBF
$ 1.108
IRFB11N50APBF Datasheet PDF (8 Pages)
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IRFB11N50APBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
170000 mW
Drain to Source Voltage (Vds)
500 V
Rise Time
35 ns
Input Capacitance (Ciss)
1423pF @25V(Vds)
Fall Time
28 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
170W (Tc)

IRFB11N50APBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFB11N50APBF Documents

Vishay Siliconix
8 Pages / 0.13 MByte
Vishay Siliconix
2 Pages / 0.64 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRFB11N50 Documents

International Rectifier
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52Ω, ID = 11A
IRF
Power MOSFET(Vdss=500V, Rds(on)max=0.52Ω, Id=11A)
VISHAY
TO-220-3 N-CH 500V 11A 520mΩ
International Rectifier
SMPS MOSFET, N채널, Vd = 500V, Rds = 0.52Ω, Id = 11A, TO-220패키지
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.52Ω; ID 11A; TO-220AB; PD 170W; VGS +/-30V
Vishay Siliconix
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET N-CH 500V 11A TO-220AB
VISHAY
TO-220AB N-CH 500V 11A
Vishay Siliconix
MOSFET N-CH 500V 11A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220
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