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Part Datasheet Search > MOSFETs > Infineon > IRFB31N20D Datasheet PDF
IRFB31N20D
Part 3D Model
$ 0.471
IRFB31N20D Datasheet PDF (12 Pages)
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IRFB31N20D Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220
Polarity
N-CH
Power Dissipation
3100 mW
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
31A
Rise Time
38 ns
Input Capacitance (Ciss)
2370pF @25V(Vds)
Fall Time
10 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3100 mW

IRFB31N20D Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

IRFB31N20D Documents

Infineon
12 Pages / 0.13 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRFB31N20 Documents

IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.082Ω, Id=31A)
Infineon
TO-220AB N-CH 200V 31A
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.082Ω; ID 31A; TO-220AB; PD 200W; VGS +/-30V
International Rectifier
Trans MOSFET N-CH 200V 31A 3Pin(3+Tab) TO-220AB
Infineon
TO-220AB N-CH 200V 31A
IFC
N-Channel 200V 0.082Ω 70NC Flange Mount Hexfet Power Mosfet - TO-220AB
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