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Part Datasheet Search > MOSFETs > International Rectifier > IRFB31N20DPBF Datasheet PDF
IRFB31N20DPBF
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IRFB31N20DPBF Datasheet PDF (12 Pages)
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IRFB31N20DPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
31.0 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
0.082 Ω
Polarity
N-Channel
Power Dissipation
3.1 W
Part Family
IRFB31N20D
Input Capacitance
2370pF @25V
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
31.0 A
Rise Time
38.0 ns
Thermal Resistance
0.75℃/W (RθJC)
Input Capacitance (Ciss)
2370pF @25V(Vds)
Input Power (Max)
3.1 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRFB31N20DPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Size-Length
10.54 mm
Size-Height
8.77 mm
Operating Temperature
-55℃ ~ 175℃

IRFB31N20DPBF Documents

International Rectifier
12 Pages / 0.13 MByte
International Rectifier
20 Pages / 2.6 MByte

IRFB31N20 Documents

IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.082Ω, Id=31A)
Infineon
TO-220AB N-CH 200V 31A
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.082Ω; ID 31A; TO-220AB; PD 200W; VGS +/-30V
International Rectifier
Trans MOSFET N-CH 200V 31A 3Pin(3+Tab) TO-220AB
Infineon
TO-220AB N-CH 200V 31A
IFC
N-Channel 200V 0.082Ω 70NC Flange Mount Hexfet Power Mosfet - TO-220AB
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