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Part Datasheet Search > MOSFETs > Infineon > IRFB3206GPBF Datasheet PDF
IRFB3206GPBF
$ 2.382
IRFB3206GPBF Datasheet PDF (8 Pages)
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IRFB3206GPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Polarity
N-Channel
Power Dissipation
300 W
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
210A
Rise Time
82 ns
Input Capacitance (Ciss)
6540pF @50V(Vds)
Input Power (Max)
300 W
Fall Time
83 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IRFB3206GPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
16.51 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFB3206GPBF Documents

Infineon
8 Pages / 0.28 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte

IRFB3206 Documents

International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
TO-220AB N-CH 60V 210A
Infineon
TO-220AB N-CH 60V 210A
International Rectifier
Trans MOSFET N-CH 60V 210A 3Pin(3+Tab) TO-220AB Tube
Infineon
TO-220AB N-CH 60V 210A
International Rectifier
Trans MOSFET N-CH 60V 210A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
MOSFET N-CH 60V 120A TO220AB
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