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Part Datasheet Search > MOSFETs > Infineon > IRFB38N20DPBF Datasheet PDF
IRFB38N20DPBF
$ 0.625
IRFB38N20DPBF Datasheet PDF (11 Pages)
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IRFB38N20DPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
320 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.054 Ω
Polarity
N-CH
Power Dissipation
320 W
Threshold Voltage
5 V
Input Capacitance
2900 pF
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
38A
Rise Time
95 ns
Input Capacitance (Ciss)
2900pF @25V(Vds)
Input Power (Max)
3.8 W
Fall Time
47 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.8W (Ta), 300W (Tc)

IRFB38N20DPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
16.51 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFB38N20DPBF Documents

Infineon
11 Pages / 0.32 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
12 Pages / 0.56 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
2 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte

IRFB38N20 Documents

Infineon
TO-220AB N-CH 200V 38A
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.054Ω; ID 43A; TO-220AB; PD 300W; VGS +/-30V
International Rectifier
MOSFET N-CH 200V 43A TO-220AB
Infineon
TO-220AB N-CH 200V 38A
IFA
N-Channel 200V 54mΩ 60NC Flange Mount Hexfet Power Mosfet - TO-220AB
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.054Ω, Id=44A)
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