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Part Datasheet Search > MOSFETs > Infineon > IRFB4137PBF Datasheet PDF
IRFB4137PBF
$ 2.27
IRFB4137PBF Datasheet PDF (8 Pages)
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IRFB4137PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
341 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.056 Ω
Polarity
N-Channel
Power Dissipation
341 W
Threshold Voltage
5 V
Input Capacitance
5168 pF
Drain to Source Voltage (Vds)
300 V
Continuous Drain Current (Ids)
38A
Rise Time
23 ns
Input Capacitance (Ciss)
5168pF @50V(Vds)
Fall Time
20 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
341W (Tc)

IRFB4137PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
9.02 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFB4137PBF Documents

Infineon
8 Pages / 0.38 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.19 MByte

IRFB4137 Documents

International Rectifier
MOSFET N-CH 300V 38A TO-220PAK
Infineon
300V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
TO-220AB N-CH 300V 38A
International Rectifier
Trans MOSFET N-CH 300V 38A 3Pin(3+Tab) TO-220AB Tube
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