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Part Datasheet Search > BJTs > ON Semiconductor > MPSA06RA Datasheet PDF
MPSA06RA
$ 0.087
MPSA06RA Datasheet PDF (10 Pages)
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MPSA06RA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
100 MHz
Number of Pins
3 Pin
Case/Package
TO-226-3
Number of Positions
3 Position
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
80 V
hFE Min
100 @100mA, 1V
Input Power (Max)
625 mW
DC Current Gain (hFE)
100
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

MPSA06RA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MPSA06RA Documents

ON Semiconductor
10 Pages / 0.37 MByte
ON Semiconductor
11 Pages / 0.39 MByte
ON Semiconductor
2 Pages / 0.45 MByte
ON Semiconductor
1 Pages / 0.15 MByte

MPSA06 Documents

ON Semiconductor
Trans GP BJT NPN 80V 0.5A 3Pin TO-92 Bulk
Fairchild
Trans GP BJT NPN 80V 0.5A 625mW 3Pin TO-92 Bag
Diotec Semiconductor
Transistor: NPN; bipolar; 80V; 500mA; 625mW; TO92
CJ
TO-92 NPN 80V 500mA
Central Semiconductor
Trans GP BJT NPN 80V 0.5A 3Pin TO-92 Box
NXP
Bipolar Transistors - BJT NPN GP 80V
Multicomp
MULTICOMP MPSA06 Bipolar (BJT) Single Transistor, NPN, 80V, 100MHz, 625mW, 500mA, 100 hFE
KEC(Korea Electronics)
General Purpose Transistor
Philips
NPN general purpose transistor
Continental Device
NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
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