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Part Datasheet Search > MOSFETs > Infineon > IRFB52N15DPBF Datasheet PDF
IRFB52N15DPBF
$ 0.903
IRFB52N15DPBF Datasheet PDF (11 Pages)
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IRFB52N15DPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
320 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.032 Ω
Polarity
N-Channel
Power Dissipation
320 W
Threshold Voltage
5 V
Input Capacitance
2770 pF
Drain to Source Voltage (Vds)
150 V
Continuous Drain Current (Ids)
51A
Rise Time
47 ns
Input Capacitance (Ciss)
2770pF @25V(Vds)
Input Power (Max)
3.8 W
Fall Time
25 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.8W (Ta), 230W (Tc)

IRFB52N15DPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.82 mm
Size-Height
16.51 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFB52N15DPBF Documents

Infineon
11 Pages / 0.31 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
2 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte

IRFB52N15 Documents

International Rectifier
Power MOSFET(Vdss=150V/ Rds(on)max=0.032Ω/ Id=50A)
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.032Ω, Id=50A)
Infineon
TO-220AB N-CH 150V 51A
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 32Milliohms; ID 51A; TO-220AB; PD 230W; -55deg
International Rectifier
MOSFET N-CH 150V 51A TO-220AB
Infineon
TO-220AB N-CH 150V 51A
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