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Part Datasheet Search > MOSFETs > Infineon > IRFB7730PBF Datasheet PDF
IRFB7730PBF
$ 0.939
IRFB7730PBF Datasheet PDF (12 Pages)
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IRFB7730PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
375 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0026 Ω
Polarity
N-Channel
Power Dissipation
375 mW
Threshold Voltage
3.7 V
Input Capacitance
13660 pF
Drain to Source Voltage (Vds)
75 V
Continuous Drain Current (Ids)
246A
Rise Time
120 ns
Input Capacitance (Ciss)
13660pF @25V(Vds)
Input Power (Max)
375 W
Fall Time
115 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
375W (Tc)

IRFB7730PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
16.51 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFB7730PBF Documents

Infineon
12 Pages / 0.64 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

IRFB7730 Documents

Infineon
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
TO-220AB N-CH 75V 246A
International Rectifier
Single N-Ch 75V 195A 2.6mOhm 407NC Flange Mount HEXFET Mosfet - TO-220
Infineon
Trans MOSFET N-CH 75V 246A 3Pin TO-220AB Tube
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