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IRFBC20PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

High Voltage MOS

Case Package:

TO-220

Description:

VISHAY IRFBC20PBF Power MOSFET, N Channel, 2.2A, 600V, 4.4Ω, 10V, 4V

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Documentation:

IRFBC20PBF Datasheet (8 Pages)

Part Numbering System on1 Page

IRFBC20PBF Datasheet PDF (8 Pages)

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IRFBC20PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

4.4 Ω

Polarity

N-Channel

Power Dissipation

50 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

2.20 A

Rise Time

23 ns

Input Capacitance (Ciss)

350pF @25V(Vds)

Fall Time

25 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

50 W

View Datasheet >

IRFBC20PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

10.41 mm

Size-Width

4.7 mm

Size-Height

9.01 mm

Operating Temperature

-55℃ ~ 150℃

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IRFBC20PBF Environmental

IRFBC20PBF Documents

IRFBC20PBF Datasheet

Vishay Semiconductor

8 Pages / 1.46 MByte

IRFBC20PBF Other Datasheet PDF

Vishay Semiconductor

9 Pages / 1.6 MByte

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