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IRFBC20PBF
$ 0.892
IRFBC20PBF Datasheet PDF (9 Pages)
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IRFBC20PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
4.4 Ω
Polarity
N-Channel
Power Dissipation
50 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
2.20 A
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
50 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
50 W

IRFBC20PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
50

IRFBC20PBF Documents

VISHAY
9 Pages / 1.6 MByte
VISHAY
9 Pages / 1.6 MByte

IRFBC20 Documents

International Rectifier
MOSFET N-CH 600V 2.2A TO-220AB
VISHAY
TO-220AB N-CH 600V 2.2A
Vishay Siliconix
MOSFET N-CH 600V 2.2A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 600V 2.2A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=600V, Rds(on)=4.4Ω, Id=2.2A)
VISHAY
TO-220-3 N-CH 600V 2.2A 4.4Ω
VISHAY
TO-252-3 N-CH 600V 2.2A 4.4Ω
Vishay Semiconductor
VISHAY IRFBC20PBF Power MOSFET, N Channel, 2.2A, 600V, 4.4Ω, 10V, 4V
VISHAY
TO-252-3 N-CH 600V 2.2A 4.4Ω
International Rectifier
MOSFET N-CH 600V 2.2A TO-262
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