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Part Datasheet Search > High Voltage MOS > Vishay Semiconductor > IRFBC30ALPBF Datasheet PDF
IRFBC30ALPBF
$ 0.685
IRFBC30ALPBF Datasheet PDF (13 Pages)
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IRFBC30ALPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-262-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
2.2 Ω
Polarity
N-Channel
Power Dissipation
74 W
Threshold Voltage
4.5 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
3.60 A
Rise Time
13 ns
Fall Time
12 ns
Operating Temperature (Max)
150 ℃

IRFBC30ALPBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
9.65 mm
Operating Temperature
-55℃ ~ 150℃

IRFBC30ALPBF Documents

Vishay Semiconductor
13 Pages / 0.26 MByte
Vishay Semiconductor
12 Pages / 0.26 MByte

IRFBC30 Documents

ST Microelectronics
N - CHANNEL 600V - 1.8Ω - 3.6A - TO-220 PowerMESH]II MOSFET
VISHAY
Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
International Rectifier
Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 600V 3.6A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3 N-CH 600V 3.6A 2.2Ω
VISHAY
TO-220-3 N-CH 600V 3.6A 2.2Ω
VISHAY
TO-252-3 N-CH 600V 3.6A 2.2Ω
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 2.2Ω; ID 3.6A; TO-220AB; PD 74W; VGS +/-20V
International Rectifier
MOSFET N-CH 600V 3.6A TO-220AB
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