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IRFBC30LPBF
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IRFBC30LPBF Datasheet PDF (8 Pages)
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IRFBC30LPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-262
Polarity
N-Channel
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
3.60 A
Input Capacitance (Ciss)
660pF @25V(Vds)
Input Power (Max)
3.1 W

IRFBC30LPBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFBC30LPBF Documents

VISHAY
8 Pages / 0.97 MByte
VISHAY
11 Pages / 0.29 MByte

IRFBC30 Documents

ST Microelectronics
N - CHANNEL 600V - 1.8Ω - 3.6A - TO-220 PowerMESH]II MOSFET
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Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
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Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 600V 3.6A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3 N-CH 600V 3.6A 2.2Ω
VISHAY
TO-220-3 N-CH 600V 3.6A 2.2Ω
VISHAY
TO-252-3 N-CH 600V 3.6A 2.2Ω
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 2.2Ω; ID 3.6A; TO-220AB; PD 74W; VGS +/-20V
International Rectifier
MOSFET N-CH 600V 3.6A TO-220AB
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