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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFBC30PBF Datasheet PDF
IRFBC30PBF
$ 0.742
IRFBC30PBF Datasheet PDF (9 Pages)
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IRFBC30PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
2.2 Ω
Power Dissipation
74000 mW
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Rise Time
13 ns
Input Capacitance (Ciss)
660pF @25V(Vds)
Fall Time
14 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
74W (Tc)

IRFBC30PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFBC30PBF Documents

Vishay Siliconix
9 Pages / 1.83 MByte
Vishay Siliconix
9 Pages / 1.83 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRFBC30 Documents

ST Microelectronics
N - CHANNEL 600V - 1.8Ω - 3.6A - TO-220 PowerMESH]II MOSFET
VISHAY
Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
International Rectifier
Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 600V 3.6A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3 N-CH 600V 3.6A 2.2Ω
VISHAY
TO-220-3 N-CH 600V 3.6A 2.2Ω
VISHAY
TO-252-3 N-CH 600V 3.6A 2.2Ω
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 2.2Ω; ID 3.6A; TO-220AB; PD 74W; VGS +/-20V
International Rectifier
MOSFET N-CH 600V 3.6A TO-220AB
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