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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFBE20PBF Datasheet PDF
IRFBE20PBF
$ 0.285
IRFBE20PBF Datasheet PDF (9 Pages)
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IRFBE20PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Power Dissipation
54W (Tc)
Drain to Source Voltage (Vds)
800 V
Input Capacitance (Ciss)
530pF @25V(Vds)
Input Power (Max)
54 W
Power Dissipation (Max)
54W (Tc)

IRFBE20PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFBE20PBF Documents

Vishay Siliconix
9 Pages / 1.11 MByte
Vishay Siliconix
3 Pages / 0.14 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRFBE20 Documents

International Rectifier
MOSFET N-CH 800V 1.8A TO-220AB
Vishay Siliconix
MOSFET N-CH 800V 1.8A TO-220AB
VISHAY
MOSFET N-CH 800V 1.8A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 800V 1.8A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=800V, Rds(on)=6.5Ω, Id=1.8A)
VISHAY
TO-220-3 N-CH 800V 1.8A 6.5Ω
Vishay Semiconductor
VISHAY IRFBE20PBF Power MOSFET, N Channel, 1.8A, 800V, 6.5Ω, 10V, 4V
International Rectifier
MOSFET N-CH 800V 1.8A TO-220AB
Vishay Siliconix
MOSFET N-CH 800V 1.8A TO-220AB
International Rectifier
MOSFET N-CH 800V 1.8A D2PAK
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