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Part Datasheet Search > MOSFETs > International Rectifier > IRFBE20PBF Datasheet PDF
IRFBE20PBF
$ 0.806
IRFBE20PBF Datasheet PDF (8 Pages)
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IRFBE20PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
800 V
Current Rating
1.80 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
6.5 Ω
Polarity
N-Channel
Power Dissipation
54 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
1.80 A
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRFBE20PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃

IRFBE20PBF Documents

International Rectifier
8 Pages / 0.24 MByte
International Rectifier
9 Pages / 0.99 MByte

IRFBE20 Documents

International Rectifier
MOSFET N-CH 800V 1.8A TO-220AB
Vishay Siliconix
MOSFET N-CH 800V 1.8A TO-220AB
VISHAY
MOSFET N-CH 800V 1.8A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 800V 1.8A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=800V, Rds(on)=6.5Ω, Id=1.8A)
VISHAY
TO-220-3 N-CH 800V 1.8A 6.5Ω
Vishay Semiconductor
VISHAY IRFBE20PBF Power MOSFET, N Channel, 1.8A, 800V, 6.5Ω, 10V, 4V
International Rectifier
MOSFET N-CH 800V 1.8A TO-220AB
Vishay Siliconix
MOSFET N-CH 800V 1.8A TO-220AB
International Rectifier
MOSFET N-CH 800V 1.8A D2PAK
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